| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| E28F200CV-B80 | 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5) | Intel-Corporation | TSOP | 48 | 0°C | 70°C | 636 K |
| E28F200CV-T80 | 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5) | Intel-Corporation | TSOP | 48 | 0°C | 70°C | 636 K |
| E28F800CV-B70 | 8-Mbit (512K x 16, 1024K x 8) SmartVoltage boot block flash memory. Access speed 70 ns, Vpp/Vcc 5/3.3 or 12/5 | Intel-Corporation | TSOP | 48 | 0°C | 70°C | 561 K |
| E28F800CV-T70 | 8-Mbit (512K x 16, 1024K x 8) SmartVoltage boot block flash memory. Access speed 70 ns, Vpp/Vcc 5/3.3 or 12/5 | Intel-Corporation | TSOP | 48 | 0°C | 70°C | 561 K |
| FGR3000CV-90DA | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 79 K |
| M30622MCV-XXXGP | Single chip 16-bit CMOS microcomputer | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 80 | -40°C | 125°C | 1 M |
| TE28F200CV-B80 | 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5) | Intel-Corporation | TSOP | 48 | -40°C | 85°C | 633 K |
| TE28F200CV-T80 | 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5) | Intel-Corporation | TSOP | 48 | -40°C | 85°C | 633 K |
| TE28F800CV-B90 | 8-Mbit (512K x 16, 1024K x 8) SmartVoltage boot block flash memory. Access speed 90 ns, Vpp/Vcc 5/3.3 or 12/5 | Intel-Corporation | TSOP | 48 | -40°C | 85°C | 561 K |
| TE28F800CV-T90 | 8-Mbit (512K x 16, 1024K x 8) SmartVoltage boot block flash memory. Access speed 90 ns, Vpp/Vcc 5/3.3 or 12/5 | Intel-Corporation | TSOP | 48 | -40°C | 85°C | 561 K |
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