| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCW61B | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | 3 | - | - | 32 K |
| BCW61C | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | 3 | - | - | 32 K |
| BCW65ALT1 | NPN silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 84 K |
| BCW65C | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 37 K |
| BCW68F | PNP transistor for high current applications | Korea-Electronics-Co--Ltd- | - | 3 | -65°C | 150°C | 145 K |
| BCW68G | PNP General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 37 K |
| BCW68G | PNP transistor for high current applications | Korea-Electronics-Co--Ltd- | - | 3 | -65°C | 150°C | 145 K |
| BCW68GLT1 | PNP silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 82 K |
| BCW69 | PNP transistor for general purpose and switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -65°C | 150°C | 156 K |
| BCW69LT1 | PNP silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 410 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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