| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL16V8D-20QJI | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | -40°C | 85°C | 316 K |
| GAL22V10D-20LJI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
| GAL22V10D-20LPI | High Performance E2CMOS PLD, 20ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | -40°C | 85°C | 386 K |
| GS8161Z18D-200I | 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z32D-200I | 6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z36D-200I | 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS816218D-200 | 6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 956 K |
| GS816218D-200I | 6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 165 | -40°C | 85°C | 956 K |
| GS8162Z18D-200 | 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | 0°C | 70°C | 901 K |
| GS8162Z36D-200 | 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | 0°C | 70°C | 901 K |
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