| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| B033D-25.8 | 2.5V 1.0A low dropout voltage regulator | distributor | - | 3 | 0°C | 125°C | 340 K |
| GAL16V8D-25LJI | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | -40°C | 85°C | 316 K |
| GAL16V8D-25LPI | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | -40°C | 85°C | 316 K |
| GAL22V10D-25LJ | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10D-25LJI | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | -40°C | 85°C | 386 K |
| GAL22V10D-25LP | High Performance E2CMOS PLD, 25ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10D-25QJ | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10D-25QP | High Performance E2CMOS PLD, 25ns, quarter power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GS8161Z18D-250I | 5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS8161Z32D-250I | 5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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