Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E640412D-TC/L | 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 415 K |
K4E640412D-TC/L | 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 415 K |
K4E660412D-TC/L | 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 415 K |
K4F640412D-TC/L | 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 367 K |
K4F640812D-TC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 368 K |
K4F660412D-TC/L | 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 367 K |
K4F660812D-TC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. | Samsung-Electronic | TSOP (II) | 32 | 0°C | 70°C | 368 K |
K4S560832D-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
K4S640832D-TC/L10 | 12M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 66 MHz (CL=2&3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
K4S640832D-TC/L1L | 12M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
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