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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4E640412D-TC/L16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C415 K
K4E640412D-TC/L16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C415 K
K4E660412D-TC/L16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C415 K
K4F640412D-TC/L16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C367 K
K4F640812D-TC/L8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C368 K
K4F660412D-TC/L16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C367 K
K4F660812D-TC/L8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.Samsung-ElectronicTSOP (II)320°C70°C368 K
K4S560832D-TC/L758M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHzSamsung-ElectronicTSOP II540°C70°C118 K
K4S640832D-TC/L1012M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 66 MHz (CL=2&3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C128 K
K4S640832D-TC/L1L12M x 8bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C128 K
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