| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1012 | NPN epitaxial planar silicon transistor, low-voltage larg-current amp application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 115 K |
| 2SD1012 | NPN epitaxial planar silicon transistor, low-voltage larg-current amp application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 115 K |
| 2SD1046 | NPN planar silicon transistor, for LF power amp, 50W output, large power switching | SANYO-Electric-Co--Ltd- | 2022 | 3 | - | - | 105 K |
| 2SD1048 | NPN epitaxial planar silicon transistor, for general-purpose AF application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 70 K |
| RFD10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 133 K |
| RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 133 K |
| SLD104AU | AlGaAs Laser Diode | Sony-Semiconductor | - | - | - | - | 45 K |
| SLD104AV | GaAlAs Laser Diode | Sony-Semiconductor | - | - | - | - | 93 K |
| SLD105UL | GaAlAs Laser Diode | Sony-Semiconductor | - | - | - | - | 112 K |
| SLD105VL | GaA/As Laser Diode | Sony-Semiconductor | - | - | - | - | 118 K |
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