| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQD10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 787 K |
| FQD10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 576 K |
| HGTD10N40F1 | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| HGTD10N40F1S | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| HGTD10N50F1S | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 76 K |
| STD10NF06L | N-CHANNEL 60V 0.1 OHM 10A DPAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 302 K |
| STD10NF10 | N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 462 K |
| VND10N06 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 168 K |
| VND10N06-1 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 168 K |
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