Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD1211 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
2SD1212 | NPN epitaxial planar silicon transistor, 30V/12A high-speed switching application | SANYO-Electric-Co--Ltd- | 2010B | 3 | - | - | 105 K |
2SD1213 | NPN epitaxial planar silicon transistor, 30V/20A high-speed switching application | SANYO-Electric-Co--Ltd- | 2022 | 3 | - | - | 100 K |
BQ2011KSN-D121 | GAS GAUGE FOR HIGH DISCHARGE RATES ()5A), SMALL PACK CAPACITIES ((2AH), (5 MOHM SENSE RESISTOR WITH | Texas-Instruments | - | 16 | - | - | 175 K |
BQ2011KSN-D121TR | GAS GAUGE FOR HIGH DISCHARGE RATES ()5A), SMALL PACK CAPACITIES ((2AH), (5 MOHM SENSE RESISTOR WITH | Texas-Instruments | D | 16 | - | - | 175 K |
CXD1217Q | Synchronizing Signal Generator for Video Camera | Sony-Semiconductor | - | - | - | - | 192 K |
ISD1210P | Single-chip voice record/playback device with 10 seconds duration | Information-Storage-Devices-Inc- | PDIP | 28 | 0°C | 70°C | 1 M |
ISD1210S | Single-chip voice record/playback device with 10 seconds duration | Information-Storage-Devices-Inc- | SOIC | 28 | 0°C | 70°C | 1 M |
QED121 | Plastic Infrared Light Emitting Diode. 880 nm AlGaAs | distributor | - | - | - | - | 86 K |
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