| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1226M | NPN transistor for medium power amplifier, 80V 0.7A | ROHM | - | 3 | -55°C | 150°C | 207 K |
| KSD1221 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 39 K |
| KSD1222 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 39 K |
| MJD122-1 | NPN transistor for high DC current gain, 100V, 8A | ON-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD122-1 | NPN darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
| MJD122-1 | NPN transistor for high DC current gain, 100V, 8A | ON-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD122T4 | NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD122T4 | NPN transistor for high DC current gain, 100V, 8A | ON-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD122T4 | NPN darlington transistor for high DC current gain, 100V, 5A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 91 K |
| QED122 | PLASTIC INFRARED LIGHT EMITTING DIODE | Fairchild-Semiconductor | - | - | - | - | 358 K |
| QSD122 | PLASTIC SILICON INFRARED PHOTODARLINGTON | Fairchild-Semiconductor | - | - | - | - | 93 K |
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