| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1270 | NPN epitaxial silicon transistor. Power amplifier, vertical deflection output | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 70 K |
| 2SD1274B | Silicon NPN triple diffusion planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 56 K |
| 2SD1277 | NPN silicon darlington transistor. Switching regulators, PWM inverters, solenoid and relay drivers | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 66 K |
| CJD127 | PNP Complementary silicon power darlington transistor | distributor | DPAK | 4 | -65°C | 150°C | 484 K |
| MJD127 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD127 | Complementary darlington power transistor | Motorola | - | 4 | -65°C | 150°C | 284 K |
| MJD127 | PNP transistor, 100V, 8A | Samsung-Electronic | - | 3 | -65°C | 150°C | 194 K |
| MJD127-1 | PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 137 K |
| MJD127-1 | PNP transistor, 100V, 8A | Samsung-Electronic | IPAK | 3 | -65°C | 150°C | 194 K |
| SD1272-02 | RF NPN Transistor | Microsemi-Corporation | M113 | - | - | - | 427 K |
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