| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHD12N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 79 K |
| PHD12NQ15T | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT428 | - | - | - | 111 K |
| RFD12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| STD12N05 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 177 K |
| STD12N05L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 176 K |
| STD12N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 177 K |
| STD12N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 176 K |
| STD12N10L | N-CHANNEL 100V - 0.12 OHM - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 45 K |
| STD12NE06 | N-CHANNEL 60V - 0.08 OHM - 12A DPAK/IPAK SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 107 K |
| STD12NE06L | N-CHANNEL 60V - 0.09 OHM - 12A TO-251/TO-252 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
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