| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD1382TD | 18V; 900mW; 16-bit 500kHz sampling ADC. For medical imaging, CAT, magnetic resonance, vibration analysis, parametric measurement unit (ATE) | Analog-Devices | - | 48 | 10°C | 40°C | 1 M |
| AD1382TD/883B | 18V; 900mW; 16-bit 500kHz sampling ADC. For medical imaging, CAT, magnetic resonance, vibration analysis, parametric measurement unit (ATE) | Analog-Devices | - | 48 | 10°C | 40°C | 1 M |
| BD132 | PNP power transistor. | Philips-Semiconductors | SOT32 | 3 | -65°C | 150°C | 71 K |
| BD132 | PNP power transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 71 K |
| BYD13D | Controlled avalanche rectifier. Repetitive peak reverse voltage 200 V. | Philips-Semiconductors | SOD81 | 2 | -65°C | 175°C | 61 K |
| BYD13G | Controlled avalanche rectifier. Repetitive peak reverse voltage 400 V. | Philips-Semiconductors | SOD81 | 2 | -65°C | 175°C | 61 K |
| BYD13J | Controlled avalanche rectifier. Repetitive peak reverse voltage 600 V. | Philips-Semiconductors | SOD81 | 2 | -65°C | 175°C | 61 K |
| BYD13K | Controlled avalanche rectifier. Repetitive peak reverse voltage 800 V. | Philips-Semiconductors | SOD81 | 2 | -65°C | 175°C | 61 K |
| BYD13K | Controlled avalanche rectifier. Repetitive peak reverse voltage 800 V. | Philips-Semiconductors | SOD81 | 2 | -65°C | 175°C | 61 K |
| BYD13M | Controlled avalanche rectifier. Repetitive peak reverse voltage 1000 V. | Philips-Semiconductors | SOD81 | 2 | -65°C | 175°C | 61 K |
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