| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD1347 | NPN epitaxial planar silicon transistor, large-current driving application | SANYO-Electric-Co--Ltd- | 2006A | 3 | - | - | 96 K |
| BD135 | NPN SILICON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 33 K |
| BD136 | PNP SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
| BD138 | PNP SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
| BD139 | NPN SILICON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 33 K |
| SD1390 | UHF BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| SD1391 | UHF BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 56 K |
| SD1391 | UHF BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 56 K |
| SLD131UL | GaAlAs Laser Diode | Sony-Semiconductor | - | - | - | - | 127 K |
| SLD1324ZT | High-Power Density 1W Laser Diode | Sony-Semiconductor | - | - | - | - | 175 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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