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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AD1376645mW; complete high speed 16-bit A/D converterAnalog-DevicesDIP32-55°C100°C158 K
AD1376JD18V; complete, high speed 16-bit A/D converterAnalog-Devices-320°C70°C573 K
AD1376KD18V; complete, high speed 16-bit A/D converterAnalog-Devices-320°C70°C573 K
AD1377585mW; complete high speed 16-bit A/D converterAnalog-DevicesDIP32-55°C100°C158 K
AD1377JD18V; complete, high speed 16-bit A/D converterAnalog-Devices-320°C70°C573 K
AD1377KD18V; complete, high speed 16-bit A/D converterAnalog-Devices-320°C70°C573 K
BD137NPN Epitaxial Silicon TransistorFairchild-Semiconductor----41 K
BD137hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1SGS-Thomson-Microelectronics----63 K
MD1372Ultra high sensivity gateable photomultiplier DC-module. 1/2 inche DC photosensor module. Window material quartz. Dark current/offset voltage 800pA/40mV @ 1 x 10^6 gain & 1V/20nA.distributor-55°C40°C357 K
MD1373Ultra high sensivity gateable photomultiplier DC-module. 1/2 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 800pA/40mV @ 1 x 10^6 gain & 1V/20nA.distributor-55°C40°C357 K
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