| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD233 | NPN transistor for medium power linear and switching applications, 45V, 2A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 38 K |
| BD234 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 37 K |
| BD235 | NPN transistor for medium power linear and switching applications, 60V, 2A | Fairchild-Semiconductor | - | 3 | -65°C | 150°C | 38 K |
| BD236 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 37 K |
| PHD23NQ10T | 100 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 102 K |
| QED233 | PLASTIC INFRARED LIGHT EMITTING DIODE | Fairchild-Semiconductor | - | - | - | - | 84 K |
| QED234 | PLASTIC INFRARED LIGHT EMITTING DIODE | Fairchild-Semiconductor | - | - | - | - | 84 K |
| SLD235VL | Index-Guided High Power AlGaAs Laser Diode | Sony-Semiconductor | - | - | - | - | 45 K |
| SLD237VL | Index-Guided High Power AlGaAs Laser Diode | Sony-Semiconductor | - | - | - | - | 45 K |
| SLD238VL | Index-Guided High Power AlGaAs Laser Diode | Sony-Semiconductor | - | - | - | - | 45 K |
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