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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BD242CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W.distributor-3-65°C150°C47 K
BD244APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.distributor-3-65°C150°C47 K
BD244BPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.distributor-3-65°C150°C47 K
BD244CPNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.distributor-3-65°C150°C47 K
D240/02Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 200V, Vrsm = 300V.distributorB20°C180°C110 K
D240/02Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 200V, Vrsm = 300V.distributorH20°C180°C110 K
D240/04Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 400V, Vrsm = 500V.distributorB20°C180°C110 K
D240/08Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 800V, Vrsm = 900V.distributorB20°C180°C110 K
D240/12Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 1200V, Vrsm = 1300V.distributorB20°C180°C110 K
D240/16Rectifier diode. All purpose high power rectifier diodes, non-controllable and half controlleed rectifiers. Vrrm = 1600V, Vrsm = 1700V.distributorB20°C180°C110 K
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