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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DD28F032SA-10032-Mbit(2 Mbit x 16, 4 Mbit x 8) flashfile memory. Access speed 100 ns, Vcc = 5.0 V, 100 pFIntel-CorporationTSOP560°C70°C1 M
DD28F032SA-7032-Mbit(2 Mbit x 16, 4 Mbit x 8) flashfile memory. Access speed 70 ns, Vcc = 5.0 V, 30 pFIntel-CorporationTSOP560°C70°C1 M
DD28F032SA-8032-Mbit(2 Mbit x 16, 4 Mbit x 8) flashfile memory. Access speed 80 ns, Vcc = 5.0 V, 100 pFIntel-CorporationTSOP560°C70°C1 M
MD28F0101024K (128K x 8) CMOS FLASH memoryIntel-CorporationCERDIP32-55°C125°C317 K
MMBD2835LT1Monolithic dual switching diodeMotorola-3-55°C150°C84 K
MMBD2836LT1Monolithic dual switching diodeMotorola-3-55°C150°C84 K
MMBD2837LT1Monolithic dual switching diodeMotorola-3-55°C150°C82 K
MMBD2838LT1Monolithic dual switching diodeMotorola-3-55°C150°C82 K
R1170D281A-TR800mA LDO regulator. Output voltage 2.8V. Built-in chip enable circuit, active at L. Taping type TR.distributor-6-40°C85°C261 K
R1170D281A-TR800mA LDO regulator. Output voltage 2.8V. Built-in chip enable circuit, active at L. Taping type TR.distributor-6-40°C85°C261 K
TD28F0101024K (128K x 8) CMOS FLASH memoryIntel-CorporationCERDIP32-40°C110°C317 K
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