| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQD2N100 | 1000V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 622 K |
| FQD2N30 | 300V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 732 K |
| FQD2N30 | 300V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 732 K |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTD2N120BNS | 12A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 85 K |
| HGTD2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 89 K |
| MLD2N06CL | Voltage clamped current limiting mosfet | Motorola | DPAK | 4 | -50°C | 150°C | 194 K |
| MTD2N40E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 268 K |
| MTD2N50E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 299 K |
| PHD2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| STD2NB80 | N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
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