| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTD3N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 156 K |
| HGTD3N60B3S | 7A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 141 K |
| HGTD3N60C3S | TRANSISTOR IGBT TO-252 | Fairchild-Semiconductor | - | - | - | - | 227 K |
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 243 K |
| PHD3N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
| PHD3N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
| PHKD3NQ10T | 100 V, dual N-channel trenchMOS transistor | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 79 K |
| RFD3N08L | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 69 K |
| RFD3N08LSM | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 69 K |
| STGD3NB60S | N-CHANNEL 3A - 600V DPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
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