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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2S56D40AKT-10265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D40AKT-10L265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D40AKT-75265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D40AKT-75A265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D40AKT-75AL265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D40AKT-75L265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M2S56D40ATP-10265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7Mitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D40ATP-10L265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D40ATP-75L265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
M2S56D40ATP-75L265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
RN5VD40ACVoltage detector with output delay. Detector threshold 4.0V. Output type Nch open drain. Antistatic bag for samplesdistributor-5-40°C85°C198 K
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