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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AD542JHInitial offset voltage: 2.0mV; high performance BiFET operational amplifierAnalog-Devices-80°C70°C384 K
AD542KHInitial offset voltage: 2.0mV; high performance BiFET operational amplifierAnalog-Devices-80°C70°C384 K
AD542LHInitial offset voltage: 2.0mV; high performance BiFET operational amplifierAnalog-Devices-80°C70°C384 K
AD542SHInitial offset voltage: 2.0mV; high performance BiFET operational amplifierAnalog-Devices-80°C70°C384 K
AD542SH/883BInitial offset voltage: 2.0mV; high performance BiFET operational amplifierAnalog-Devices-80°C70°C384 K
AD549JCHIPS18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurementAnalog-DevicesChip-0°C70°C408 K
AD549LH18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurementAnalog-Devices-80°C70°C408 K
AD549SH18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurementAnalog-Devices-8-55°C125°C408 K
AD549SH/883B18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurementAnalog-Devices-8-55°C125°C408 K
KTD545General Purpose TransistorKorea-Electronics-Co--Ltd-----68 K
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