| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD798 | 8Ampere high voltage darlington power transistor | distributor | - | 3 | -55°C | 150°C | 131 K |
| AD790JN | 18V; 500mW; fast, precision comparator. For zero-crossing detectors, overvoltage detectors, pulse-width modulators | Analog-Devices | DIP | 8 | 0°C | 70°C | 263 K |
| AD790JR | 18V; 500mW; fast, precision comparator. For zero-crossing detectors, overvoltage detectors, pulse-width modulators | Analog-Devices | SOIC | 8 | 0°C | 70°C | 263 K |
| AD795JN | Low power, low noise precision FET operational amplifier | Analog-Devices | MINI DIP | 8 | 0°C | 70°C | 332 K |
| AD795KN | Low power, low noise precision FET operational amplifier | Analog-Devices | MINI DIP | 8 | 0°C | 70°C | 332 K |
| BD790 | PNP complementary plastic silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 176 K |
| BD792 | PNP complementary plastic silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 176 K |
| LD79U12K | 14GHz, 123W Microwave Power Module for Communications | NEC-Electronics-Inc- | - | - | - | - | 125 K |
| MA3D798 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
| MA3D799 | Silicon epitaxial planer type (cathode common) Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
| [1] 2 [3] [4] [5] [6] |
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