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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SD880YNPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W.distributor-3-55°C150°C47 K
2SD882NPN power transistor, 40V, 3ANEC-Electronics-Inc--3-55°C150°C165 K
HSD880Emitter to base voltage:7V 3A NPN epitaxial planar transistor for low frequency power amplifier applicationsdistributorTO220AB3--34 K
HSD882Emitter to base voltage:5V 3A NPN epitaxial planar transistor for using in output stage of 1W audio amplifierdistributor-3--40 K
HSD882SEmitter to base voltage:5V 3A NPN epitaxial planar transistor for the output stage of 0.75W audio, voltage regulator and relay driverdistributor-3--42 K
PJD882CK40V; 3A; NPN epitaxial silicon transistordistributor-3-20°C85°C184 K
PJD882CT40V; 3A; NPN epitaxial silicon transistordistributor-3-20°C85°C184 K
SD880TSchottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 75degC 8.0 A.distributor-4-55°C125°C43 K
SD880YTSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A.distributor-4-55°C125°C38 K
SD880YTSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A.distributor-4-55°C125°C38 K
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