| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD911 | 100 V, complementary NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 149 K |
| CD914 | Switching diode chip | distributor | - | - | -65°C | 175°C | 78 K |
| CMBD914 | CMBD914 max reverse breakdown voltage VBR = 100V at IR = 100uA. | distributor | - | 3 | -55°C | 150°C | 17 K |
| CMPD914 | High speed switching diode | distributor | - | 3 | -65°C | 150°C | 77 K |
| GNR10D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 60 K |
| GNR14D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 60 K |
| GNR20D911K | Varistor. Max allowable voltage: ACrms=550V, DC=745V. Varistor voltage 819-1001V. | distributor | - | 2 | -40°C | 85°C | 60 K |
| IRFD9110 | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -0.70 A | International-Rectifier | - | 4 | -55°C | 175°C | 173 K |
| MMBD914 | 100 V, high-speed switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
| MMBD914 | 100 V, high-speed switching diode | distributor | SOT | 3 | -55°C | 150°C | 49 K |
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