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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AME8501BEFTDA21Reset time: 1.5mS; micropower uP reset devicedistributor-3-40°C85°C70 K
AME8501CEFTDA21Reset time: 1.5mS; micropower uP reset devicedistributor-3-40°C85°C70 K
AME8501CEFTDA24Reset time: 1.5mS; micropower uP reset devicedistributor-3-40°C85°C70 K
AME8501CEFTDA26Reset time: 1.5mS; micropower uP reset devicedistributor-3-40°C85°C70 K
AME8501CEFTDA27Reset time: 1.5mS; micropower uP reset devicedistributor-3-40°C85°C70 K
AME8501CEFTDA28Reset time: 1.5mS; micropower uP reset devicedistributor-3-40°C85°C70 K
AME8501CEFTDA29Reset time: 1.5mS; micropower uP reset devicedistributor-3-40°C85°C70 K
MADA2030GDC-2 GHz, 5-Bit GaAs attenuatorM-A-COM---manufacturer-of-RF-14-55°C85°C98 K
MDA208GSingle-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward output current 2.0A at Ta=50degC.distributor-4-55°C125°C21 K
MDA210GSingle-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward output current 2.0A at Ta=50degC.distributor-4-55°C125°C21 K
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