| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CDB5394 | Evaluation board | Cirrus-Logic | - | - | -10°C | 70°C | 422 K |
| DB5-15D | +/-15 V, 1.5 W, encapsulated DC-DC converter | distributor | Plastic | 5 | -25°C | 71°C | 137 K |
| K6T0808C1D-DB55 | 55ns, 32Kx8 bit low low power CMOS static RAM | Samsung-Electronic | DIP | 28 | 0°C | 70°C | 170 K |
| K6T0808C1D-DB55 | 55ns, 32Kx8 bit low low power CMOS static RAM | Samsung-Electronic | DIP | 28 | 0°C | 70°C | 170 K |
| K6T4008C1B-DB55 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 55ns, LL-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 171 K |
| NDB5060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 358 K |
| SDB55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 412 K |
| SDB55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 412 K |
| SDB55N03L | 30V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 417 K |
| SDB55N03L | 30V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 417 K |
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