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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH4S64DBKG-7268435456-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1440°C70°C681 K
MH4S64DBKG-72,684,354,456-bit (4194304-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C681 K
MH4S64DBKG-7L2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C681 K
MH4S64DBKG-7L268435456-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1440°C70°C681 K
MH4S64DBKG-82,684,354,456-bit (4194304-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C681 K
MH4S64DBKG-8L2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C681 K
MH8S64DBKG-7536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1440°C70°C688 K
MH8S64DBKG-7L536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1440°C70°C688 K
MH8S64DBKG-8536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1440°C70°C688 K
MH8S64DBKG-8L536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1440°C70°C688 K
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