Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FDC634P | P-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 71 K |
FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 198 K |
FDC637AN | Single N-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 240 K |
FDC638P | Single P-Channel 2.5V Specified PowerTrench MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 240 K |
FDC640P | P-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 261 K |
FDC642P | P-Channel 2.5V Specified PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 269 K |
FDC6506P | Dual P-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 204 K |
FDC653N | N-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 70 K |
FDC654P | P-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | SOIC | 6 | - | - | 74 K |
FDC655AN | Single N-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | SOIC | 6 | - | - | 198 K |
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