Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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DD300 | 3000 V, 20 mA fast recovery high voltage silicon rectifier | distributor | Plastic | 2 | -55°C | 150°C | 93 K |
FDD3580 | 80V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 120 K |
FDD3672 | N-Channel UltraFET ® Trench MOSFET 100V, 44A, 28mOhm | Fairchild-Semiconductor | - | - | - | - | 233 K |
FDD3680 | 100V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 75 K |
FDD3682 | N-Channel UltraFET ® Trench MOSFET 100V, 32A, 36mOhm | Fairchild-Semiconductor | - | - | - | - | 266 K |
FDD3690 | 100V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 84 K |
FDD3706 | 20V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 113 K |
FDD3706 | 20V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 113 K |
GS8170DD36C-333I | 333MHz 512K x 36 18MB double data rate sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 825 K |
SDD3055L2 | 20V; 15A; 50W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 558 K |
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