| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NDH833N | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V | Fairchild-Semiconductor | - | - | - | - | 221 K |
| NDH8436 | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V | Fairchild-Semiconductor | - | - | - | - | 293 K |
| NDH8447 | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 4.4 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V | Fairchild-Semiconductor | - | - | - | - | 94 K |
| NDH8504P | Dual P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 210 K |
| NDH8520C | Dual N & P-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | - | - | - | 228 K |
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 101 K |
| NDH853N | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V | Fairchild-Semiconductor | - | - | - | - | 82 K |
| NDH854P | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V | Fairchild-Semiconductor | - | - | - | - | 85 K |
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