| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD7590DIBQ | +17.0V; 450mW; DI CMOS analog switches with data latches | Analog-Devices | CERDIP | 16 | -25°C | 85°C | 1 M |
| AD7592DIBQ | +17.0V; 450mW; DI CMOS analog switches with data latches | Analog-Devices | CERDIP | 14 | -25°C | 85°C | 1 M |
| K9F5608Q0B-DIB0 | 32M x 8 bit NAND flash memory, 1.7 - 1.95V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 604 K |
| K9F5608Q0C-DIB0 | 32M x 8 bit NAND flash memory, 1.7 - 1.95V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 655 K |
| K9F5608U0B-DIB0 | 32M x 8 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 604 K |
| K9F5608U0C-DIB0 | 32M x 8 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 655 K |
| K9F5616Q0B-DIB0 | 16M x 16 bit NAND flash memory, 1.7 - 1.95V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 604 K |
| K9F5616Q0C-DIB0 | 16M x 16 bit NAND flash memory, 1.7 - 1.95V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 655 K |
| K9F5616U0B-DIB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 604 K |
| K9F5616U0C-DIB0 | 16M x 16 bit NAND flash memory, 2.7 - 3.6V | Samsung-Electronic | TBGA | 63 | -40°C | 85°C | 655 K |
| [1] 2 [3] |
|---|
