Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FY4ADJ-03A | 4A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -55°C | 150°C | 38 K |
M5M465400DJ-6 | Fast page mode 67108864-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 246 K |
M5M465400DJ-6S | Fast page mode 67108864-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 32 | 0°C | 70°C | 246 K |
S-80721AN-DJ-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
S-80721AN-DJ-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
S-80721AN-DJ-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
S-80721SN-DJ-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
S-80721SN-DJ-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
S-80721SN-DJ-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
S-80821ANNP-EDJ-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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