| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416V254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| TMS44400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 5.0V | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS46400DJ-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, low power | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS46400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, low power | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS46400DJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low power | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS46400PDJ-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, self-refresh | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS46400PDJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, self-refresh | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS46400PDJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, self-refresh | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS46400PDJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, self-refresh | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
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