| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FY4ADJ-03A | 30V trench gate dual MOSFET | distributor | - | - | - | - | 43 K |
| FY4ADJ-03A | 30V trench gate dual MOSFET | distributor | - | - | - | - | 43 K |
| KM416C254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416C254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416C254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| KM416V254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung-Electronic | SOJ | 40 | 0°C | 70°C | 840 K |
| MT4LC4M4E8DJ-5 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns | distributor | SOJ | 24 | 0°C | 70°C | 291 K |
| MT4LC4M4E8DJ-6 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns | distributor | SOJ | 24 | 0°C | 70°C | 291 K |
| MT4LC4M4E9DJ-5 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns | distributor | SOJ | 24 | 0°C | 70°C | 291 K |
| MT4LC4M4E9DJ-6 | 4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns | distributor | SOJ | 24 | 0°C | 70°C | 291 K |
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