| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T4008C1C-DL70 | 512Kx8 bit CMOS static RAM, Vcc range=4.5-5.5V, 70ns, L-power | Samsung-Electronic | DIP | 32 | 0°C | 70°C | 125 K |
| MMDL770T1 | 70 V, schottky barrier diode | distributor | - | 2 | -55°C | 150°C | 105 K |
| NDL7408P2KC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P2LD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P4K | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | DIP | 8 | -40°C | 85°C | 358 K |
| NDL7408P4L | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | DIP | 8 | -40°C | 85°C | 358 K |
| NDL7408P4LC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | DIP | 8 | -40°C | 85°C | 358 K |
| NDL7408PKD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408PL | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408PLC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
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