| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DR65-0001 | Quad driver for GaAs switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 16 | -40°C | 85°C | 217 K |
| DR65-0001TR | Quad driver for GaAs switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 16 | -40°C | 85°C | 217 K |
| DR65-0002-TBG | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| DR65-0002-TBP | 1700-2000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
| DR65-0008 | Quad positive voltage driver for GaAs FET switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 16 | -40°C | 85°C | 230 K |
| DR65-0008-TR | Quad positive voltage driver for GaAs FET switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 16 | -40°C | 85°C | 230 K |
| DR65-0109 | Single driver for GaAs FET switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 8 | -40°C | 85°C | 213 K |
| DR65-0109TR | Single driver for GaAs FET switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 8 | -40°C | 85°C | 213 K |
| FDR6580 | N-Channel 2.5V Specified PowerTrench® MOSFET [Advanced] | Fairchild-Semiconductor | - | - | - | - | 241 K |
| FDR6674A | 30V N-Channel PowerTrench® MOSFET [Preliminary] | Fairchild-Semiconductor | - | - | - | - | 359 K |
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