| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KDS184 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 204 K |
| KDS187 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 106 K |
| KDS190 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 105 K |
| KDS193 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 104 K |
| KDS196 | Silicon diode for ultra high speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 200 K |
| LQ064V1DS11 | Color TFT-LCD module | Sharp | Epoxy resin | - | 0°C | 55°C | 114 K |
| MSC23136C-60DS10 | 1,048,576- word x 36-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 599 K |
| MSC23136C-70DS10 | 1,048,576- word x 36-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 599 K |
| MSC23136C-80DS10 | 1,048,576- word x 36-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 599 K |
| MSC23136CL-60DS10 | 1,048,576- word x 36-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 599 K |
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