| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416V256DT-6 | 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 83 K |
| KM41C4000DT-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns | Samsung-Electronic | TSOP II | 20 | 0°C | 70°C | 340 K |
| KM41V4000DT-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns | Samsung-Electronic | TSOP II | 20 | 0°C | 70°C | 340 K |
| KM44C1000DT-6 | 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 20 | 0°C | 70°C | 372 K |
| KM44V1000DT-6 | 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP II | 20 | 0°C | 70°C | 372 K |
| MT58L512Y32DT-6 | 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
| MT58L512Y36DT-6 | 3.3V, 512K x 36 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
| MT58V1MV18DT-6 | 2.5V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
| MT58V512V32DT-6 | 2.5V, 512K x 32 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
| MT58V512V36DT-6 | 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 6ns | distributor | TQFP | 100 | 0°C | 70°C | 526 K |
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