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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
DT410EL100V; N-channel enchancement mode field effect transistordistributor-4-65°C150°C73 K
DT451AN30V; N-channel enchancement mode field effect transistordistributor-4-65°C150°C73 K
DT451N30V; N-channel enchancement mode field effect transistordistributor-4-65°C150°C73 K
FDT458P30V P-Channel PowerTrench MOSFETFairchild-Semiconductor----99 K
MMDT412430V; 200mA DUAL NPN small signal surface mount transistor. Ideal for medium power amplification and switchingdistributor-6-55°C150°C46 K
MMDT412625V; 200mA dual PNP small signal surface mount transistor. Ideal for medium power amplification and switchingdistributor-6-55°C150°C41 K
MMDT414660V; 200mA complementary NPN/PNP small signal surface mount transistor. Ideal for medium power amplification and switchingdistributor-6-55°C150°C60 K
MMDT440160V; 600mA dual NPN small signal surface mount transistor. Ideal for medium power amplification and switchingdistributor-6-55°C150°C55 K
MMDT440340V; 600mA dual PNP small signal surface mount transistor. Ideal for medium power amplification and switchingdistributor-6-55°C150°C50 K
MMDT441360V; 600mA complementary NPN/PNP small signal surface mount transistor. Ideal for low power application and switchingdistributor-6-55°C150°C59 K
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