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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M465160DTP-5(4194304-word by 16-BIT) dynamic RAM, 50nsMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP500°C70°C246 K
M5M465165DTP-5EDO mode 67108864-bit (4194304-word by 16-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C273 K
M5M465165DTP-6EDO mode 67108864-bit (4194304-word by 16-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C273 K
M5M465165DTP-6SEDO mode 67108864-bit (4194304-word by 16-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C273 K
M5M467805DTP-5SEDO mode 67108864-bit (8388608-word by 8-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP320°C70°C273 K
M5M4V16169DTP-1016M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-1516M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M4V16169DTP-716M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP70--737 K
M5M564R16DTP-101048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C90 K
M5M564R16DTP-121048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C90 K
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