| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28LV010RT1DB25 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | distributor | DIP | 32 | -55°C | 125°C | 425 K |
| 28LV010RT2DB25 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | distributor | DIP | 32 | -55°C | 125°C | 425 K |
| 28LV010RT4DB25 | 3.3V 1 Megabit (128K x 8-bit) - EEPROM | distributor | DIP | 32 | -55°C | 125°C | 425 K |
| FDB2532 | N-Channel PowerTrench ® MOSFET 150V, 79A, 16mOhm | Fairchild-Semiconductor | - | - | - | - | 275 K |
| FDB2552 | N-Channel PowerTrench ® MOSFET 150V, 37A, 36mOhm | Fairchild-Semiconductor | - | - | - | - | 256 K |
| FDB2570 | 150V N-Channel PowerTrench MOSFET | Fairchild-Semiconductor | - | - | - | - | 81 K |
| FDB2572 | N-Channel UltraFET ® Trench MOSFET 150V, 29A, 54mOhm | Fairchild-Semiconductor | - | - | - | - | 269 K |
| JTDB25 | 25 W, 36 V, 960-1215 MHz common base transistor | distributor | 55AW | 3 | - | - | 110 K |
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