| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LCE11A | 11.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications | distributor | - | 2 | -55°C | 175°C | 424 K |
| P4KE110 | 89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P4KE110A | 94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P4KE11A | 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 844 K |
| P6KE110 | 89.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 468 K |
| P6KE110A | 94.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 468 K |
| P6KE11A | 9.40V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 468 K |
| QEE113 | PLASTIC INFRARED LIGHT EMITTING DIODE | Fairchild-Semiconductor | - | - | - | - | 332 K |
| QRE1113.GR | REFLECTIVE OBJECT SENSOR | Fairchild-Semiconductor | - | - | - | - | 337 K |
| QRE1113.GR | REFLECTIVE OBJECT SENSOR | Fairchild-Semiconductor | - | - | - | - | 337 K |
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