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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MBM29DL321BE12TRFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29DL321TE12PBTFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic FBGA63-40°C85°C1 M
MBM29DL321TE12TNFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29DL321TE12TRFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MC10E122FN9-bit bufferMotorolaPLCC28--94 K
MTE125N20EISOTOP TMOS E-FET power field effect transistorMotorolaSOT4-40°C150°C228 K
P6KE120AZener transient voltage suppressor undirectional and bidirectionalMotorolaPDIP2-65°C175°C81 K
P6KE12AZener transient voltage suppressor undirectional and bidirectionalMotorolaPDIP2-65°C175°C81 K
P6KE12CTransient Voltage SuppressorMicrosemi-Corporation----83 K
P6KE12CATransient Voltage SuppressorMicrosemi-Corporation----83 K
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