| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E160811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E160811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4E160812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E160812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| MC100E167FN | 6-bit 2:1 mux-register | Motorola | PLCC | 28 | - | - | 105 K |
| MC10E167FN | 6-bit 2:1 mux-register | Motorola | PLCC | 28 | - | - | 105 K |
| MJE16002 | Complementary silicon plastic power transistor | Motorola | - | 3 | -65°C | 150°C | 425 K |
| MJE16004 | NPN silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 425 K |
| MJE16106 | NPN silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 380 K |
| MJE16204 | NPN silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 276 K |
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