Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FSYE430R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 58 K |
LC86E4332 | 8-bit single chip microcontroller | SANYO-Electric-Co--Ltd- | DIC52S | 52 | 10°C | 40°C | 337 K |
MC100E431FN | 3-Bit Diff Set/Reset Flip-Flop | ON-Semiconductor | PLCC | 28 | - | - | 109 K |
MC100E431FNR2 | 3-Bit Diff Set/Reset Flip-Flop | ON-Semiconductor | PLCC | 28 | - | - | 109 K |
MC10E431FN | 3-Bit Diff Set/Reset Flip-Flop | ON-Semiconductor | PLCC | 28 | - | - | 109 K |
MC10E431FNR2 | 3-Bit Diff Set/Reset Flip-Flop | ON-Semiconductor | PLCC | 28 | - | - | 109 K |
MJE4343 | High-Voltage — High Power Transistors | ON-Semiconductor | - | 3 | - | - | 142 K |
MJE4353 | High-Voltage — High Power Transistors | ON-Semiconductor | - | 3 | - | - | 142 K |
NE434S01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | S01 | - | - | - | 77 K |
NE434S01-T1B | N-channel HJ-FET | NEC-Electronics-Inc- | S01 | - | - | - | 77 K |
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