| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE552 | Silicon rectifier. Max reccurent reverse voltage 600V. Max average forward rectified current 1A. | distributor | DO41 | 2 | -65°C | 175°C | 17 K |
| NTE5524 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 200V. RMS forard current It(rms) = 35A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
| NTE5525 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 250V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
| NTE5526 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 300V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
| NTE5527 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 400V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
| NTE5528 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 500V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
| NTE5529 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 600V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
| NTE553 | Schottky barrier diode. Reverse voltage -35V. Forward current 100mA. | distributor | DO35 | 2 | -20°C | 60°C | 17 K |
| NTE5530 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 700V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
| NTE5531 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 800V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
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