Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
NE5532 | Dual Operational Amplifier | Fairchild-Semiconductor | - | - | - | - | 79 K |
NE5539N | High frequency operational amplifier. | Philips-Semiconductors | - | 14 | 0°C | 70°C | 230 K |
NE5539N | High frequency operational amplifier. | Philips-Semiconductors | DIP | 14 | 0°C | 70°C | 230 K |
NTE553 | Schottky barrier diode. Reverse voltage -35V. Forward current 100mA. | distributor | DO35 | 2 | -20°C | 60°C | 17 K |
NTE5530 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 700V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
NTE5531 | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 800V. RMS forard current It(rms) = 25A. | distributor | TO48 | 3 | -65°C | 125°C | 18 K |
NTE5538 | Silicon controlled rectifier (SCR). Peak forward blocking voltage 800V. RMS on-state current 50A. | distributor | TO218 | 3 | -40°C | 125°C | 23 K |
NTE5539 | Silicon controlled rectifier (SCR). Repetitive peak off-state forward & reverse voltage Vdrm,Vrrm =400V. Max RMS on-state current 55A. | distributor | TO218 | 3 | -40°C | 125°C | 19 K |
SE5534JG | LOW-NOISE OPERATIONAL | Texas-Instruments | JG | 8 | -55°C | 125°C | 119 K |
SE5534JGB | LOW-NOISE OPERATIONAL | Texas-Instruments | JG | 8 | -55°C | 125°C | 119 K |
[1] [2] [3] [4] [5] 6 [7] [8] |
---|