Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E640812B-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812B-TC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812B-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812B-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812B-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
K4E640812B-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
NTE6407 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 28V (typ). | distributor | DO35 | 2 | -40°C | 125°C | 18 K |
NTE6407 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 28V (typ). | distributor | DO35 | 2 | -40°C | 125°C | 18 K |
NTE6408 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 32V (typ). | distributor | DO35 | 2 | -40°C | 125°C | 18 K |
NTE6409 | Unijunction transistor. | distributor | - | 3 | -65°C | 125°C | 20 K |
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