| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KSE800 | NPN silicon darlington transistor | Fairchild-Semiconductor | SOP | 3 | -55°C | 150°C | 73 K |
| KSE801 | NPN silicon darlington transistor | Fairchild-Semiconductor | SOP | 3 | -55°C | 150°C | 73 K |
| KSE803 | NPN silicon darlington transistor | Fairchild-Semiconductor | SOP | 3 | -55°C | 150°C | 73 K |
| MBM29DL640E80PBT | Flash memory CMOS 64M (8M x 8/4M x 16) bit | Fujitsu-Microelectronis | plastic FBGA | 63 | -20°C | 70°C | 913 K |
| MBM29DL640E80TR | Flash memory CMOS 64M (8M x 8/4M x 16) bit | Fujitsu-Microelectronis | plastic TSOP | 48 | -20°C | 70°C | 913 K |
| MJE800T | 80V plastic darlington complementary silicon transistor | distributor | - | 3 | -55°C | 150°C | 194 K |
| MJE801T | 80V plastic darlington complementary silicon transistor | distributor | - | 3 | -55°C | 150°C | 194 K |
| MJE802T | 80V plastic darlington complementary silicon transistor | distributor | - | 3 | -55°C | 150°C | 194 K |
| MJE803T | 80V plastic darlington complementary silicon transistor | distributor | - | 3 | -55°C | 150°C | 194 K |
| MTE8080F | Infrared emitter. Peak wavelength 880 nm. | distributor | - | 2 | -20°C | 80°C | 218 K |
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