| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FRE9260D | 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 47 K |
| FRE9260H | 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 47 K |
| FRE9260R | 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 47 K |
| FSYE923A0R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 70 K |
| IRFE9230 | 200V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | LCC4 | - | - | - | 16 K |
| MA4E920-276 | 24 GHz, Stripline packaged schottky mixer diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | -- |
| MA4E926-276 | 24 GHz, Stripline packaged schottky mixer diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | -- |
| MA4E929 | Zero bias detector diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | 259 K |
| MA4E929A | Zero bias detector diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | 259 K |
| MA4E929B | Zero bias detector diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | 259 K |
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